Influence of the p-type doping on the radiometric performances of MWIR InAs/GaSb superlattice photodiodes
نویسندگان
چکیده
In this paper, quantum efficiency (QE) measurements performed on type-II InAs/GaSb superlattice (T2SL) photodiodes operating in the mid-wavelength infrared domain, are reported. Several comparisons were made in order to determine the SL structure showing optimum radiometric performances : same InAs-rich SL structure with different active zone thicknesses (from 0.5μm to 4μm) and different active zone doping (n-type versus p-type), same 1μm thick p-type active zone doping with different SL designs (InAs-rich versus GaSbrich and symmetric SL structures). Best result was obtained for the p-type doped InAs-rich SL photodiode, with a 4μm active zone thickness, showing a QE that reaches 61% at λ = 2μm and 0V bias voltage. PACS 73.21.Cd, 73.40.Kp, 85.60.Bt, 80.60.Gz Keyword: InAs/GaSb Superlattice, photodiode, Quantum efficiency. * Corresponding author: Tel.: (+33) 180 386 334; e-mail address: [email protected]
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